TSM160N10LCR RLG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM160N10LCR RLG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM160N10LCR RLG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PDFN (5x6) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 8A, 10V | |
Power Dissipation (Max) | 83W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4431 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 46A (Tc) | |
Basis Produktnummer | TSM160 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM160N10LCR RLG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM160N10LCR RLG | TSM170N06CP | TSM170N06CH | TSM150P04LCS |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Supplier Device Package | 8-PDFN (5x6) | TO-252, (D-Pak) | TO-251 (IPAK) | 8-SOP |
Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V | 15 nC @ 4.5 V | 15 nC @ 4.5 V | 48 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4431 pF @ 50 V | 900 pF @ 25 V | 900 pF @ 25 V | 2783 pF @ 20 V |
FET Feature | - | - | - | - |
Basis Produktnummer | TSM160 | TSM170 | TSM170 | TSM150 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Package / Case | 8-PowerTDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA | 8-SOIC (0.154", 3.90mm Width) |
Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 60 V | 40 V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 8A, 10V | 17mOhm @ 20A, 10V | 17mOhm @ 20A, 10V | 15mOhm @ 9A, 10V |
Power Dissipation (Max) | 83W (Tc) | 46W (Tc) | 46W (Tc) | 2.2W (Ta), 12.5W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 46A (Tc) | 38A (Tc) | 38A (Tc) | 9A (Ta), 22A (Tc) |
Serie | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden TSM160N10LCR RLG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM160N10LCR RLG - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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